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Germanium terahertz laser


Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers. Inventors: Eugene E. Haller, Erik Bründermann, U.S. Patent 6,011,810, Date: 4 January 2000
The tuning range from 1 to 4 THz of the germanium laser corresponds in other units to 30 to 140/cm, 0.4 to 1.6 kJ/mol, 4 to 17 meV, 70 µm to 0.35 mm or 40 to 200 Kelvin.
Details can be found in the book chapter: E. Bründermann, "Widely Tunable Far Infrared Hot Hole Semiconductor Lasers" published as Chapter 6 in "Long-Wavelength Infrared Semiconductor Lasers" by John Wiley and Sons, approx. 90 pages.
For inquiries visit Tech Transfer at Lawrence Berkeley National Lab, reference number: IB-1161.
See also THz germanium laser milestones and publications, for example, for further details: E. Bründermann, B. Born, S. Funkner, M. Krüger, M. Havenith, Terahertz spectroscopic techniques for the study of proteins in aqueous solutions, Proc. SPIE 7215 72150E, 1-9 (2009). DOI: 10.1117/12.808270.

germanium terahertz laser production
Terahertz germanium laser production. FZ: float zone, CZ: Czochralski, xx: dopant e.g. Be